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 INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BDX20
DESCRIPTION *High Current Capability *Collector-Emitter Sustaining Voltage: VCEO(SUS)= -140V(Min) *High Switching Speed APPLICATIONS *Designed for LF large signal power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEX VCEO VEBO IC IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage- VBE= 1.5V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature
VALUE -160 -160 -140 -7 -10 -7 117 200 -65~200
UNIT V V V V A A W
PC TJ Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.5 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
BDX20
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= -200mA ; IB= 0
-140
V
VCEX
Collector-Emitter Breakdown Voltage
IC= -100mA ; VBE= 1.5V
-160
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -3A; IB= -0.3A
B
-1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -10A; IB= -2A
-5.0
V
VBE(on)-1
Base-Emitter On Voltage
IC= -3A ; VCE= -4V
-1.7
V
VBE(on)-2
Base-Emitter On Voltage
IC= -10A ; VCE= -4V VCE= -140V;VBE= 1.5V VCE= -140V;VBE=1.5V,TC= 150 VCB= -140V; IE= 0
-5.7 -1.0 -10 -1.0
V
ICEX
Collector Cutoff Current
mA
ICBO
Collector Cutoff Current
mA
IEBO
Emitter Cutoff Current
VEB= -7.0V; IC= 0
-5.0
mA
hFE-1
DC Current Gain
IC= -3A ; VCE= -4V
20
70
hFE-2
DC Current Gain
IC= -10A ; VCE= -4V
10
fT
Current Gain-Bandwidth Product
IC= -1A;VCE=-10V;ftest= 1.0MHz
4
MHz
isc Websitewww.iscsemi.cn
2


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